A new alliance for the development of extreme ultraviolet (EUV) lithography light sources was launched in Japan. This is another action of the Japan Ultraviolet Lithography System Development Association (EUVA, Kawasaki, Japan) after the development of EUV exposure technology. The project was finalized in March 2008. In May, the association held its final seminar to report on the development of EUV light sources. The results of the report mainly show an EUV light source with a 60W intermediate focus point using laser plasma technology (LPP) and an EUV light source with a 20W intermediate focus point using discharge plasma technology (DPP). The project, which ended in March, was supported by the Ministry of Economy, Trade and Industry (METI) for a period of five years with a total value of $125 million.
However, the development of EUV light source can not be commercialized, and the target setting of the light source exceeds 115W, which can meet the mass production demand of 100wph of 300mm wafer. The new alliance includes EUV light source developers UsioInc. (Tokyo) and KomatsuLtd. (Tokyo), EUV equipment manufacturers Nikon and Canon, and signed a two-year relationship with METI's subsidiary New Energy and Industrial Technology Development Organization (NEDO). Contracts. The contract helped the new alliance to use the tools and facilities of the previous EUVA project.
The biggest challenge in developing an EUV source is how to control debris, dust or contaminants for the sputter wall in a plasma atmosphere. If there is no debris control, the light source will quickly deteriorate. Preventing contaminants from entering the lens and photomask is also essential for the proper functioning of EUV sources.
In an application to NEDO, EUVA proposed a new proposal for EUV source cleaning technology, including mask and lens contamination assessment techniques for 32nm node EUV sources, and cleaning techniques for focused beam systems. The new proposal is expected to be accepted by the end of May. EUVA hopes to launch a new three-year contract plan this year.
Nikon, Canon and ASML are currently providing alpha prototypes for R&D R&D centers, but the energy of EUV sources is still a problem for volume production at 32nm and higher. Higher energy EUV sources are still in the pipeline.
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